The IRGP4266-EPBF is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 650V and a maximum collector current of 140A. It has a maximum power dissipation of 450W and operates over a temperature range of -40°C to 175°C. The device is packaged in a TO-247AD package and is mounted through a hole. It is RoHS compliant and available in quantities of 25 per rail/tube packaging.
PackageTO-247AD
MountingThrough Hole
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Technical Specifications
International Rectifier IRGP4266-EPBF technical specifications.
General
| Package/Case | TO-247AD |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Voltage (VCEO) | 650V |
| Collector-emitter Voltage-Max | 2.1V |
| Input Type | STANDARD |
| Max Collector Current | 140A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 450W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRGP4266-EPBF Datasheet
Download the complete datasheet for International Rectifier IRGP4266-EPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.