Insulated Gate Bipolar Transistor, 65A I(C), 600V V(BR)CES, N-Channel
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| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.9V |
| Collector Emitter Voltage (VCEO) | 600V |
| Element Configuration | Single |
| Max Collector Current | 65A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Reverse Recovery Time | 89ns |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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