N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. Features a 1200V Collector-Emitter Breakdown Voltage and an 80A continuous Collector Current rating. Offers a low Collector-Emitter Saturation Voltage of 3.5V and a maximum power dissipation of 595W. Packaged in a TO-274AA (SUPER-247) through-hole mount with a 3-pin configuration. Operates across a wide temperature range from -55°C to 150°C.
Current Rating80A
MountingThrough Hole
Power595W
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Technical Specifications
International Rectifier IRGPS40B120UDP technical specifications.
General
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 3.5V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.7V |
| Current Rating | 80A |
| Height | 20.8mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.1mm |
| Max Collector Current | 80A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 595W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 595W |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 180ns |
| RoHS Compliant | No |
| Turn-Off Delay Time | 365ns |
| Turn-On Delay Time | 99ns |
| DC Rated Voltage | 1.2kV |
| Width | 5.3mm |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRGPS40B120UDP Datasheet
Download the complete datasheet for International Rectifier IRGPS40B120UDP to view detailed technical specifications.
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