N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. Features a 1200V Collector-Emitter Breakdown Voltage and an 80A continuous Collector Current rating. Offers a low Collector-Emitter Saturation Voltage of 3.5V and a maximum power dissipation of 595W. Packaged in a TO-274AA (SUPER-247) through-hole mount with a 3-pin configuration. Operates across a wide temperature range from -55°C to 150°C.
Current Rating80A
MountingThrough Hole
Power595W
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Technical Specifications
International Rectifier IRGPS40B120UDP technical specifications.
General
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
3.5V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
3.7V
Current Rating
80A
Height
20.8mm
Input Type
STANDARD
Lead Free
Lead Free
Length
16.1mm
Max Collector Current
80A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
595W
Mount
Through Hole
Package Quantity
25
Packaging
Bulk
Power Dissipation
595W
Reach SVHC Compliant
No
Reverse Recovery Time
180ns
RoHS Compliant
No
Turn-Off Delay Time
365ns
Turn-On Delay Time
99ns
DC Rated Voltage
1.2kV
Width
5.3mm
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRGPS40B120UDP Datasheet
Download the complete datasheet for International Rectifier IRGPS40B120UDP to view detailed technical specifications.
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