N-Channel Insulated Gate Bipolar Transistor (IGBT) with 1200V Collector-Emitter Breakdown Voltage and 80A Continuous Collector Current. Features a low Collector-Emitter Saturation Voltage of 3.5V and a maximum power dissipation of 595W. Operates across a wide temperature range from -55°C to 150°C. Packaged in a TO-274AA (SUPER-247) 3-pin configuration for through-hole mounting. RoHS compliant and lead-free.
Current Rating80A
MountingThrough Hole
Power595W
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Technical Specifications
International Rectifier IRGPS40B120UPBF technical specifications.
General
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
3.5V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
3.71V
Current Rating
80A
Height
20.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.6mm
Max Collector Current
80A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
595W
Mount
Through Hole
Package Quantity
25
Packaging
Bulk
Power Dissipation
595W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
332ns
Turn-On Delay Time
76ns
DC Rated Voltage
1.2kV
Width
5mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRGPS40B120UPBF Datasheet
Download the complete datasheet for International Rectifier IRGPS40B120UPBF to view detailed technical specifications.
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