N-Channel Insulated Gate Bipolar Transistor (IGBT) with 1200V Collector-Emitter Breakdown Voltage and 80A Continuous Collector Current. Features a low Collector-Emitter Saturation Voltage of 3.5V and a maximum power dissipation of 595W. Operates across a wide temperature range from -55°C to 150°C. Packaged in a TO-274AA (SUPER-247) 3-pin configuration for through-hole mounting. RoHS compliant and lead-free.
Current Rating80A
MountingThrough Hole
Power595W
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Technical Specifications
International Rectifier IRGPS40B120UPBF technical specifications.
General
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 3.5V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.71V |
| Current Rating | 80A |
| Height | 20.3mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.6mm |
| Max Collector Current | 80A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 595W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 595W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 332ns |
| Turn-On Delay Time | 76ns |
| DC Rated Voltage | 1.2kV |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRGPS40B120UPBF Datasheet
Download the complete datasheet for International Rectifier IRGPS40B120UPBF to view detailed technical specifications.
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