International Rectifier
IRHNJ57Z30
Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN
Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN
MountingSurface Mount
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Technical Specifications
International Rectifier IRHNJ57Z30 technical specifications.
General
| Continuous Drain Current (ID) | 22A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Packaging | Bulk |
| Radiation Hardening | Yes |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantYes |
Datasheet
International Rectifier IRHNJ57Z30 Datasheet
Download the complete datasheet for International Rectifier IRHNJ57Z30 to view detailed technical specifications.
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