International Rectifier
IRHNJ593230
Power Field-Effect Transistor, 8A I(D), 200V, 0.505ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN
Power Field-Effect Transistor, 8A I(D), 200V, 0.505ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN
MountingSurface Mount
Quick Jump:
Technical Specifications
International Rectifier IRHNJ593230 technical specifications.
General
| Continuous Drain Current (ID) | 8A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Packaging | Bulk |
| Radiation Hardening | Yes |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantYes |
Datasheet
No datasheet is available for this part.