N-channel power MOSFET featuring 40V drain-source breakdown voltage and 104A continuous drain current. Offers low 8mΩ Rds On resistance for efficient power handling. Surface mount D2PAK package with a maximum power dissipation of 167W. Operates across a wide temperature range from -55°C to 175°C. RoHS compliant with fast switching characteristics including 18ns turn-on delay and 64ns fall time.
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International Rectifier IRL1104SPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 104A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 64ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 4.83mm |
| Input Capacitance | 3.445nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 167W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 18ns |
| Width | 9.65mm |
| RoHS | Compliant |
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