International Rectifier
IRL2203NSTRRPBF
Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power170W
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Technical Specifications
International Rectifier IRL2203NSTRRPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 116A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 66ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 3.29nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 170W |
| Rds On Max | 7mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 11ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRL2203NSTRRPBF Datasheet
Download the complete datasheet for International Rectifier IRL2203NSTRRPBF to view detailed technical specifications.
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