N-Channel Power MOSFET featuring 55V drain-source voltage and 104A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 8mΩ drain-source on-resistance and 200W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C and is RoHS compliant. Key electrical characteristics include 16V gate-source voltage and 5nF input capacitance, with turn-on delay time of 12ns and turn-off delay time of 43ns.
PackageTO-220AB
Current Rating104A
MountingThrough Hole
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Technical Specifications
International Rectifier IRL2505PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 104A |
| Current Rating | 104A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 8mR |
| Dual Supply Voltage | 55V |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 8.77mm |
| Input Capacitance | 5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 55V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRL2505PBF Datasheet
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