
N-Channel Power MOSFET, 55V Drain-Source Voltage, 104A Continuous Drain Current, and 0.01 Ohm On-Resistance. Features a D2PAK surface-mount package, 200W maximum power dissipation, and operates from -55°C to 175°C. Includes fast switching times with turn-on delay of 12ns and fall time of 84ns. This silicon metal-oxide semiconductor FET is RoHS compliant.
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International Rectifier IRL2505SPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 104A |
| Current Rating | 104A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 13mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 84ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 4.83mm |
| Input Capacitance | 5nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 200W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 55V |
| Width | 9.65mm |
| RoHS | Compliant |
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