N-Channel Power MOSFET, 55V Vds, 104A continuous drain current, and 8mΩ maximum drain-source on-resistance. This silicon Metal-Oxide-Semiconductor Field-Effect Transistor features a TO-263 D2PAK plastic package and operates from -55°C to 175°C with a maximum power dissipation of 200W. It is lead-free and RoHS compliant, with a nominal Vgs of 2V.
PackageTO-263
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Technical Specifications
International Rectifier IRL2505STRLPBF technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 104A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 8mR |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Nominal Vgs | 2V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRL2505STRLPBF Datasheet
Download the complete datasheet for International Rectifier IRL2505STRLPBF to view detailed technical specifications.
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