N-Channel Power MOSFET, TO-220AB package, featuring 100V drain-source voltage and 55A continuous drain current. Offers a low 26mΩ maximum drain-source on-resistance and 200W power dissipation. Operates across a wide temperature range from -55°C to 175°C with a 16V gate-source voltage rating. This silicon metal-oxide semiconductor FET includes a 3.7nF input capacitance and is RoHS compliant.
PackageTO-220AB
Current Rating55A
MountingThrough Hole
Power200W
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Technical Specifications
International Rectifier IRL2910PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 55A |
| Current Rating | 55A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 26mR |
| Dual Supply Voltage | 100V |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 8.77mm |
| Input Capacitance | 3.7nF |
| Lead Free | Lead Free |
| Lead Pitch | 2.54mm |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Number of Elements | 1 |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 100V |
| Width | 4.69mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRL2910PBF Datasheet
Download the complete datasheet for International Rectifier IRL2910PBF to view detailed technical specifications.
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