N-Channel Power MOSFET, TO-220AB package, featuring 100V drain-source voltage and 55A continuous drain current. Offers a low 26mΩ maximum drain-source on-resistance and 200W power dissipation. Operates across a wide temperature range from -55°C to 175°C with a 16V gate-source voltage rating. This silicon metal-oxide semiconductor FET includes a 3.7nF input capacitance and is RoHS compliant.
PackageTO-220AB
Current Rating55A
MountingThrough Hole
Power200W
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the International Rectifier IRL2910PBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
International Rectifier IRL2910PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 55A |
| Current Rating | 55A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 26mR |
| Dual Supply Voltage | 100V |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 8.77mm |
| Input Capacitance | 3.7nF |
| Lead Free | Lead Free |
| Lead Pitch | 2.54mm |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Number of Elements | 1 |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 100V |
| Width | 4.69mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRL2910PBF Datasheet
Download the complete datasheet for International Rectifier IRL2910PBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
