N-Channel Power MOSFET, D2PAK package, offering 100V drain-source voltage and 55A continuous drain current. Features low 26mΩ maximum drain-source on-resistance and 200W maximum power dissipation. Operates from -55°C to 175°C with a gate-source voltage rating of 16V. This surface-mount silicon FET includes 3.7nF input capacitance and fast switching times with 11ns turn-on and 49ns turn-off delays. RoHS compliant and lead-free.
PackageD2PAK
Current Rating55A
MountingSurface Mount
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Technical Specifications
International Rectifier IRL2910STRLPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 55A |
| Current Rating | 55A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 26mR |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 4.83mm |
| Input Capacitance | 3.7nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 100V |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRL2910STRLPBF Datasheet
Download the complete datasheet for International Rectifier IRL2910STRLPBF to view detailed technical specifications.
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