Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
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International Rectifier IRL3103S technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 64A |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance | 1.65nF |
| Max Power Dissipation | 94W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 12mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| RoHS | Not Compliant |
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