N-Channel Power MOSFET, D2PAK package, featuring 20V drain-source breakdown voltage and 39A continuous drain current. Offers low on-resistance of 23mΩ at 10V gate-source voltage. Designed for surface mounting with a maximum power dissipation of 57W. Includes fast switching characteristics with a turn-off delay time of 41ns and fall time of 89ns. This component is RoHS compliant and lead-free.
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International Rectifier IRL3302SPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 39A |
| Current Rating | 39A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 89ns |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 57W |
| Mount | Surface Mount |
| Nominal Vgs | 700mV |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 57W |
| Rds On Max | 20mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 41ns |
| DC Rated Voltage | 20V |
| RoHS | Compliant |
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