N-Channel Power MOSFET, 30V Vds, 260A continuous drain current, and 3mΩ maximum drain-source on-resistance. This silicon metal-oxide semiconductor FET features a TO-220AB plastic package for through-hole mounting and offers a maximum power dissipation of 330W. Operating temperature range is -55°C to 175°C, with a nominal gate-source voltage of 2.5V. RoHS compliant and lead-free.
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International Rectifier IRL3713PBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 260A |
| Current Rating | 250A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3MR |
| Dual Supply Voltage | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.51mm |
| Input Capacitance | 5.89nF |
| Lead Free | Lead Free |
| Length | 10.66mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330W |
| Mount | Through Hole |
| Nominal Vgs | 2.5V |
| Number of Elements | 1 |
| On-State Resistance | 3mR |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 330W |
| Radiation Hardening | No |
| Rds On Max | 3mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 30V |
| Width | 4.82mm |
| RoHS | Compliant |
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