N-Channel Power MOSFET, D2PAK package, featuring 30V Drain-Source Voltage (Vdss) and a low 3mΩ On-State Resistance. This silicon Metal-oxide Semiconductor FET offers a continuous drain current of 260A and a maximum power dissipation of 330W, suitable for surface mount applications. It operates within a temperature range of -55°C to 175°C and includes fast switching characteristics with turn-on delay of 16ns and turn-off delay of 40ns. RoHS compliant and lead-free.
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International Rectifier IRL3713SPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 260A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3MR |
| Dual Supply Voltage | 30V |
| Fall Time | 57ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 5.89nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330W |
| Mount | Surface Mount |
| Nominal Vgs | 2.5V |
| Number of Elements | 1 |
| On-State Resistance | 3mR |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 330W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 16ns |
| Width | 9.65mm |
| RoHS | Compliant |
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