N-channel MOSFET, D2PAK package, offering 20V drain-source breakdown voltage and 180A continuous drain current. Features low 4.8mΩ drain-to-source resistance and 210W maximum power dissipation. Operates across a wide temperature range from -55°C to 175°C. Surface mountable with fast switching characteristics, including 18ns turn-on delay and 36ns fall time. RoHS compliant.
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International Rectifier IRL3716SPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 4.8mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 5.09nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 210W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 210W |
| Rds On Max | 4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 18ns |
| Width | 9.65mm |
| RoHS | Compliant |
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