N-Channel Power MOSFET, 30V Vdss, 140A continuous drain current. Features low 6mΩ Rds On resistance and 200W power dissipation. Operates from -55°C to 175°C, with fast switching times including 14ns turn-on delay and 35ns fall time. Packaged in a TO-262 through-hole mount, this silicon metal-oxide semiconductor FET is RoHS compliant.
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International Rectifier IRL3803LPBF technical specifications.
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 140A |
| Current Rating | 140A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 9.65mm |
| Input Capacitance | 5nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Through Hole |
| Nominal Vgs | 1V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Rds On Max | 6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 30V |
| Width | 4.83mm |
| RoHS | Compliant |
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