International Rectifier
IRL530N
Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
PackageTO-220AB
MountingThrough Hole
Power79W
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Technical Specifications
International Rectifier IRL530N technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Resistance | 100mR |
| Element Configuration | Single |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 8.77mm |
| Input Capacitance | 800pF |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Power Dissipation | 79W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 7.2ns |
| Width | 4.69mm |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRL530N Datasheet
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