N-Channel Power MOSFET, TO-263 package, featuring 100V drain-source voltage and 17A continuous drain current. Offers a low 0.12 ohm maximum drain-source on-resistance. Operates with a nominal gate-source voltage of 2V and a maximum of 20V. This silicon, metal-oxide semiconductor FET boasts a maximum power dissipation of 79W and a wide operating temperature range from -55°C to 175°C. Designed for surface mounting, it is RoHS compliant and lead-free.
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International Rectifier IRL530NSTRLPBF technical specifications.
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 17A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 120mR |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 7.2ns |
| DC Rated Voltage | 100V |
| RoHS | Compliant |
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