International Rectifier
IRL5602S
Power Field-Effect Transistor, 24A I(D), 20V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
Power Field-Effect Transistor, 24A I(D), 20V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
PackageTO-263-3
MountingSurface Mount
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the International Rectifier IRL5602S datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
International Rectifier IRL5602S technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance | 1.46nF |
| Max Power Dissipation | 75W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 42mR |
| RoHS Compliant | No |
| Series | HEXFET® |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRL5602S Datasheet
Download the complete datasheet for International Rectifier IRL5602S to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.