International Rectifier
IRL5602S
Power Field-Effect Transistor, 24A I(D), 20V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
International Rectifier IRL5602S technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance | 1.46nF |
| Max Power Dissipation | 75W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 42mR |
| RoHS Compliant | No |
| Series | HEXFET® |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRL5602S Datasheet
Download the complete datasheet for International Rectifier IRL5602S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.