P-channel power MOSFET featuring 20V drain-source breakdown voltage and 24A continuous drain current. Offers low 42mΩ drain-source resistance (Rds On) and 75W maximum power dissipation. Designed for surface mounting in a D2PAK package, this silicon metal-oxide semiconductor FET boasts fast switching speeds with a 9.7ns turn-on delay and 84ns fall time. Operating temperature range spans -55°C to 175°C.
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International Rectifier IRL5602SPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 24A |
| Current Rating | -24A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | 20V |
| Dual Supply Voltage | -20V |
| Fall Time | 84ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 4.83mm |
| Input Capacitance | 1.46nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 75W |
| Rds On Max | 42mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 9.7ns |
| DC Rated Voltage | -20V |
| Width | 9.65mm |
| RoHS | Compliant |
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