P-Channel Power MOSFET, 20V Drain-Source Voltage, 24A Continuous Drain Current. Features 42mΩ maximum Drain-Source On-Resistance at a nominal 1V Gate-Source Voltage. Operates with a Gate-Source Voltage of 8V, offering a 75W maximum power dissipation. Packaged in a D2PAK for surface mounting, with a maximum operating temperature of 175°C. RoHS compliant and supplied on tape and reel.
Sign in to ask questions about the International Rectifier IRL5602STRLPBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRL5602STRLPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 62mR |
| Dual Supply Voltage | 20V |
| Fall Time | 84ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 1.46nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 75W |
| Rds On Max | 42mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 53ns |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRL5602STRLPBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
