
P-Channel Power MOSFET, 20V Drain-Source Voltage, 24A Continuous Drain Current. Features 42mΩ maximum Drain-Source On-Resistance at a nominal 1V Gate-Source Voltage. Operates with a Gate-Source Voltage of 8V, offering a 75W maximum power dissipation. Packaged in a D2PAK for surface mounting, with a maximum operating temperature of 175°C. RoHS compliant and supplied on tape and reel.
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International Rectifier IRL5602STRLPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 62mR |
| Dual Supply Voltage | 20V |
| Fall Time | 84ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 1.46nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 75W |
| Rds On Max | 42mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 53ns |
| RoHS | Compliant |
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