N-Channel MOSFET with 30V Drain-Source Breakdown Voltage and 150A Continuous Drain Current. Features low 3.8mOhm Rds On, 140W Max Power Dissipation, and 175°C Max Operating Temperature. Designed for through-hole mounting in a TO-262 package, this RoHS compliant component offers fast switching with turn-on delay of 18ns and fall time of 6.9ns.
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International Rectifier IRL7833LPBF technical specifications.
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 150A |
| Current Rating | 150A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 6.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.17nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| Rds On Max | 3.8mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 18ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
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