N-Channel Power MOSFET featuring 100V drain-source breakdown voltage and 13A continuous drain current. Offers low on-resistance of 9.9mΩ at a nominal gate-source voltage of 2.5V. Designed for surface mounting with a compact 6x5mm QFN-8 package, it operates across a wide temperature range from -55°C to 150°C. Key switching characteristics include a 21ns turn-on delay and 41ns fall time. This component is RoHS compliant and halogen-free.
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International Rectifier IRLH5030TR2PBF technical specifications.
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 9.9mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 41ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1mm |
| Input Capacitance | 5.185nF |
| Length | 6.15mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Nominal Vgs | 2.5V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.6W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 21ns |
| Width | 5.15mm |
| RoHS | Compliant |
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