N-Channel Power MOSFET, 100V Drain-Source Voltage, 100A Continuous Drain Current, and 9.9mΩ Max On-Resistance. This silicon, metal-oxide semiconductor FET features a QFN-8 package for surface mounting. It offers fast switching with a 21ns turn-on delay and 41ns fall time, operating from a 16V Gate-Source Voltage. Rated for 150°C max operating temperature and 3.6W max power dissipation, this RoHS compliant component is ideal for power switching applications.
PackageQFN
MountingSurface Mount
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Technical Specifications
International Rectifier IRLH5030TRPBF technical specifications.
General
| Package/Case | QFN |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 9.9MR |
| Fall Time | 41ns |
| Gate to Source Voltage (Vgs) | 16V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Nominal Vgs | 2.5V |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 21ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLH5030TRPBF Datasheet
Download the complete datasheet for International Rectifier IRLH5030TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.