N-Channel HEXFET Power MOSFET featuring 20V Drain to Source Breakdown Voltage and 10A Continuous Drain Current. Surface mountable in a 2mm x 2mm PQFN package, this component offers a low 11.7mR Drain-Source On-Resistance. Operating across a -55°C to 150°C temperature range, it boasts fast switching speeds with a 5.8ns turn-on delay and 13ns fall time. RoHS compliant with a maximum power dissipation of 1.98W.
International Rectifier IRLHS6242TR2PBF technical specifications.
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 11.7mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 11.7MR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.95mm |
| Input Capacitance | 1.11nF |
| Lead Free | Lead Free |
| Length | 2.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.98W |
| Mount | Surface Mount |
| Nominal Vgs | 800mV |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.98W |
| Radiation Hardening | No |
| Rds On Max | 11.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 5.8ns |
| Width | 2.1mm |
| RoHS | Compliant |
No datasheet is available for this part.
