N-channel silicon MOSFET for power applications, featuring a 20V drain-source voltage and 10A continuous drain current. This surface-mount device offers a low on-resistance of 0.0155 ohms, with fast switching characteristics including a 5.8ns turn-on delay and 13ns fall time. Operating across a wide temperature range from -55°C to 150°C, it supports a maximum power dissipation of 1.98W. The component is halogen-free and RoHS compliant, packaged in a compact 2x2mm QFN-6 plastic housing.
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International Rectifier IRLHS6242TRPBF technical specifications.
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.95mm |
| Input Capacitance | 1.11nF |
| Lead Free | Lead Free |
| Length | 2.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.98W |
| Mount | Surface Mount |
| Nominal Vgs | 800mV |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 5.8ns |
| Width | 2.1mm |
| RoHS | Compliant |
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