N-Channel Power MOSFET featuring 8.7A continuous drain current and 30V drain-source voltage. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 0.0195 ohms at a 10V gate-source voltage. Designed for surface mounting, it operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2.1W. Key electrical characteristics include an input capacitance of 1.019nF, a turn-on delay of 4.9ns, and a turn-off delay of 19ns. The component is halogen-free and RoHS compliant, packaged in a 2x2mm QFN-6.
MountingSurface Mount
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Technical Specifications
International Rectifier IRLHS6342TRPBF technical specifications.
General
| Continuous Drain Current (ID) | 8.7A |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.95mm |
| Input Capacitance | 1.019nF |
| Lead Free | Lead Free |
| Length | 2.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 4.9ns |
| Width | 2.1mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLHS6342TRPBF Datasheet
Download the complete datasheet for International Rectifier IRLHS6342TRPBF to view detailed technical specifications.
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