N-Channel Power MOSFET, TO-220-3 package, features 100V drain-source voltage and 8.1A continuous drain current. Offers a maximum on-resistance of 180mΩ at a nominal gate-source voltage of 2V. Designed for through-hole mounting, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C with a maximum power dissipation of 30W. Includes lead-free and RoHS compliance.
PackageTO-220-3
Current Rating8.1A
MountingThrough Hole
Quick Jump:
Technical Specifications
International Rectifier IRLI520NPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 8.1A |
| Current Rating | 8.1A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 180MR |
| Dual Supply Voltage | 100V |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 9.8mm |
| Input Capacitance | 440pF |
| Isolation Voltage | 2kV |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 180mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 40ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLI520NPBF Datasheet
Download the complete datasheet for International Rectifier IRLI520NPBF to view detailed technical specifications.
No datasheet is available for this part.
Product Images
