IRLL014NPBF

N-Channel MOSFET, 55V, 2.8A, 200mR, SOT-223

N-Channel Power MOSFET, 55V Drain-Source Voltage, 2.8A Continuous Drain Current. Features 200mΩ maximum drain-source on-resistance at a nominal 2V gate-source voltage. This single-element silicon FET offers a 2.1W power dissipation and operates across a temperature range of -55°C to 150°C. Packaged in a SOT-223 surface-mount case, it includes a 16V gate-source voltage rating and 230pF input capacitance. RoHS compliant and lead-free.

PackageSOT-223

Current Rating2A

MountingSurface Mount

Power2.1W

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Technical Specifications

International Rectifier IRLL014NPBF technical specifications.

General

Package/Case	SOT-223
Continuous Drain Current (ID)	2.8A
Current Rating	2A
Drain to Source Voltage (Vdss)	55V
Drain-source On Resistance-Max	200mR
Dual Supply Voltage	55V
Gate to Source Voltage (Vgs)	16V
Height	1.7mm
Input Capacitance	230pF
Lead Free	Lead Free
Length	6.7mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.1W
Mount	Surface Mount
Nominal Vgs	2V
Number of Elements	1
Power Dissipation	2.1W
Reach SVHC Compliant	No
RoHS Compliant	Yes
Turn-Off Delay Time	14ns
Turn-On Delay Time	5.1ns
DC Rated Voltage	55V
Width	3.7mm