N-Channel Power MOSFET, 55V Drain-Source Voltage, 2.8A Continuous Drain Current. Features 200mΩ maximum drain-source on-resistance at a nominal 2V gate-source voltage. This single-element silicon FET offers a 2.1W power dissipation and operates across a temperature range of -55°C to 150°C. Packaged in a SOT-223 surface-mount case, it includes a 16V gate-source voltage rating and 230pF input capacitance. RoHS compliant and lead-free.
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International Rectifier IRLL014NPBF technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 2.8A |
| Current Rating | 2A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 200mR |
| Dual Supply Voltage | 55V |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.7mm |
| Input Capacitance | 230pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Elements | 1 |
| Power Dissipation | 2.1W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 5.1ns |
| DC Rated Voltage | 55V |
| Width | 3.7mm |
| RoHS | Compliant |
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