N-Channel Power MOSFET, 55V Drain-Source Voltage, 5.2A Continuous Drain Current, and 51mΩ Maximum Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a TO-261AA package (SOT-223) for surface mounting. Key electrical characteristics include a 3.8A current rating, 16V Gate-to-Source Voltage, and 870pF input capacitance. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 2.1W. This component is RoHS compliant and lead-free.
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International Rectifier IRLL2705TRPBF technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 5.2A |
| Current Rating | 3.8A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 51mR |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.739mm |
| Input Capacitance | 870pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 6.2ns |
| DC Rated Voltage | 55V |
| Width | 3.7mm |
| RoHS | Compliant |
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