IRLL2705TRPBF

N-Channel MOSFET, 55V, 5.2A, 51mR, SOT-223

N-Channel Power MOSFET, 55V Drain-Source Voltage, 5.2A Continuous Drain Current, and 51mΩ Maximum Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a TO-261AA package (SOT-223) for surface mounting. Key electrical characteristics include a 3.8A current rating, 16V Gate-to-Source Voltage, and 870pF input capacitance. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 2.1W. This component is RoHS compliant and lead-free.

PackageSOT-223

Current Rating3.8A

MountingSurface Mount

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Technical Specifications

International Rectifier IRLL2705TRPBF technical specifications.

General

Package/Case	SOT-223
Continuous Drain Current (ID)	5.2A
Current Rating	3.8A
Drain to Source Voltage (Vdss)	55V
Drain-source On Resistance-Max	51mR
Fall Time	22ns
Gate to Source Voltage (Vgs)	16V
Height	1.739mm
Input Capacitance	870pF
Lead Free	Lead Free
Length	6.7mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.1W
Mount	Surface Mount
Nominal Vgs	2V
Reach SVHC Compliant	No
RoHS Compliant	Yes
Turn-Off Delay Time	35ns
Turn-On Delay Time	6.2ns
DC Rated Voltage	55V
Width	3.7mm