Power Field-Effect Transistor, 6.5A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA,
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International Rectifier IRLL3303 technical specifications.
| Package/Case | TO-261-4 |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance | 840pF |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 80 |
| Packaging | Rail/Tube |
| Rds On Max | 31mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| RoHS | Not Compliant |
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