Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3
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International Rectifier IRLML2502GTRPBF technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 45MR |
| Gate to Source Voltage (Vgs) | 12V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.25W |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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