N-Channel Power MOSFET, SOT-23 package, offering a 20V Drain-to-Source Voltage (Vdss) and a continuous drain current (ID) of 4.2A. Features a low 45mΩ maximum drain-source on-resistance and a nominal gate-source threshold voltage of 1.2V. Designed for surface-mount technology (SMT) with lead-free and RoHS compliance, this silicon metal-oxide semiconductor FET operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.25W.
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International Rectifier IRLML2502TRPBF technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 4.2A |
| Current Rating | 4.2A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 45mR |
| Dual Supply Voltage | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Nominal Vgs | 1.2V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 1.2V |
| DC Rated Voltage | 20V |
| RoHS | Compliant |
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