P-channel MOSFET for surface mount applications, featuring a 3A continuous drain current and 30V drain-source voltage. This silicon Metal-oxide Semiconductor FET offers a maximum on-resistance of 98mΩ at a nominal gate-source voltage of -2.5V. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.25W. The component is supplied in tape and reel packaging, with dimensions of 3.04mm length, 3.05mm width, and 1.02mm height.
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International Rectifier IRLML5203TRPBF technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 98MR |
| Dual Supply Voltage | -30V |
| Fall Time | 52ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.02mm |
| Input Capacitance | 510pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Nominal Vgs | -2.5V |
| Packaging | Tape and Reel |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 88ns |
| Turn-On Delay Time | 12ns |
| Width | 3.05mm |
| RoHS | Compliant |
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