N-Channel Power MOSFET, TO-236AB package, features 20V drain-source breakdown voltage and 4.1A continuous drain current. Offers low 46mΩ on-state resistance and 1.3W power dissipation. Designed for surface mounting with a compact 3.04mm x 1.4mm x 1.02mm footprint. Includes fast switching characteristics with a 3.6ns turn-on delay and 6ns fall time. This silicon Metal-oxide Semiconductor FET is HALOGEN FREE and ROHS COMPLIANT.
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International Rectifier IRLML6246TRPBF technical specifications.
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 4.1A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 46mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.02mm |
| Input Capacitance | 290pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 46MR |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Rds On Max | 46mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 12V |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 3.6ns |
| Width | 1.4mm |
| RoHS | Compliant |
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