N-Channel Power MOSFET, 30V Drain-Source Voltage, 3.4A Continuous Drain Current, and 80mΩ Maximum Drain-Source On-Resistance. This silicon Metal-Oxide-Semiconductor FET features a 1.02mm height, 3.04mm length, and 1.4mm width in a SOT-23 surface-mount package. Operating from -55°C to 150°C, it offers a 1.3W maximum power dissipation and fast switching with 3.3ns turn-on and 12ns turn-off delay times. Input capacitance is 270pF with a nominal gate-source voltage of 800mV. This component is RoHS compliant.
PackageSOT-23
MountingSurface Mount
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Technical Specifications
International Rectifier IRLML6346TRPBF technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 3.4A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 80MR |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.02mm |
| Input Capacitance | 270pF |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Nominal Vgs | 800mV |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 800mV |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 3.3ns |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLML6346TRPBF Datasheet
Download the complete datasheet for International Rectifier IRLML6346TRPBF to view detailed technical specifications.
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