N-Channel Power MOSFET, DPAK package, featuring 55V Drain-Source Breakdown Voltage and 10A Continuous Drain Current. Offers low 140mΩ Drain-Source On-Resistance at a nominal Vgs of 1V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 28W. Surface mountable with fast switching characteristics, including a 6.5ns turn-on delay.
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International Rectifier IRLR014NPBF technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 210mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 140mR |
| Dual Supply Voltage | 55V |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 265pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 28W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| On-State Resistance | 140mR |
| Package Quantity | 6000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 28W |
| Rds On Max | 140mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 6.5ns |
| RoHS | Compliant |
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