N-Channel Power MOSFET, DPAK package, featuring 55V Drain-Source Breakdown Voltage and 10A Continuous Drain Current. Offers low 140mΩ Drain-Source On-Resistance at a nominal Vgs of 1V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 28W. Surface mountable with fast switching characteristics, including a 6.5ns turn-on delay.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power28W
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Technical Specifications
International Rectifier IRLR014NPBF technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
210mR
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
140mR
Dual Supply Voltage
55V
Fall Time
23ns
Gate to Source Voltage (Vgs)
16V
Input Capacitance
265pF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
28W
Mount
Surface Mount
Nominal Vgs
1V
On-State Resistance
140mR
Package Quantity
6000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
28W
Rds On Max
140mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
12ns
Turn-On Delay Time
6.5ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRLR014NPBF Datasheet
Download the complete datasheet for International Rectifier IRLR014NPBF to view detailed technical specifications.
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