N-channel HEXFET power MOSFET featuring 55V drain-source breakdown voltage and 16A continuous drain current. Surface mount DPAK package offers 58mΩ drain-source resistance (Rds On Max) and 35W power dissipation. Ideal for applications requiring fast switching with 8.2ns turn-on delay and 16ns fall time. Operating temperature range from -55°C to 175°C.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power35W
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Technical Specifications
International Rectifier IRLR024ZTRPBF technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
16A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
58mR
Drain to Source Voltage (Vdss)
55V
Fall Time
16ns
Gate to Source Voltage (Vgs)
16V
Height
2.38mm
Input Capacitance
380pF
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
35W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
35W
Radiation Hardening
No
Rds On Max
58mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
19ns
Turn-On Delay Time
8.2ns
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRLR024ZTRPBF Datasheet
Download the complete datasheet for International Rectifier IRLR024ZTRPBF to view detailed technical specifications.
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