N-channel HEXFET power MOSFET featuring 55V drain-source breakdown voltage and 16A continuous drain current. Surface mount DPAK package offers 58mΩ drain-source resistance (Rds On Max) and 35W power dissipation. Ideal for applications requiring fast switching with 8.2ns turn-on delay and 16ns fall time. Operating temperature range from -55°C to 175°C.
International Rectifier IRLR024ZTRPBF technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 58mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 2.38mm |
| Input Capacitance | 380pF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Rds On Max | 58mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 8.2ns |
| Width | 6.22mm |
| RoHS | Compliant |
No datasheet is available for this part.
