N-Channel Power MOSFET, 100V Drain-Source Voltage, 10A Continuous Drain Current, and 185mΩ Max Drain-Source On-Resistance. This silicon, metal-oxide semiconductor FET features a DPAK surface-mount package, 48W maximum power dissipation, and operates from -55°C to 175°C. Key switching characteristics include a 4ns turn-on delay and 22ns fall time. RoHS compliant and lead-free.
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| Package/Case | DPAK |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 11A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 185MR |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 2.39mm |
| Input Capacitance | 440pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Power Dissipation | 48W |
| Radiation Hardening | No |
| Rds On Max | 185mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 4ns |
| DC Rated Voltage | 100V |
| Width | 6.22mm |
| RoHS | Compliant |
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