IRLR120NTRLPBF

N-Channel Power MOSFET, 100V Drain-Source Voltage, 10A Continuous Drain Current, and 185mΩ Max Drain-Source On-Resistance. This silicon, metal-oxide semiconductor FET features a DPAK surface-mount package, 48W maximum power dissipation, and operates from -55°C to 175°C. Key switching characteristics include a 4ns turn-on delay and 22ns fall time. RoHS compliant and lead-free.