International Rectifier
IRLR120PBF
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
PackageTO-252
Current Rating7.7A
Power42W
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the International Rectifier IRLR120PBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
International Rectifier IRLR120PBF technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 7.7A |
| Current Rating | 7.7A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 100V |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 42W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLR120PBF Datasheet
Download the complete datasheet for International Rectifier IRLR120PBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.