Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
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International Rectifier IRLR3103 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 55A |
| Current Rating | 52A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 19mR |
| Input Capacitance | 1.6nF |
| Lead Free | Contains Lead |
| Max Power Dissipation | 107W |
| Mount | Surface Mount |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Rds On Max | 19mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| DC Rated Voltage | 30V |
| RoHS | Not Compliant |
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