N-channel power MOSFET in a DPAK surface-mount package. Features a 30V drain-source breakdown voltage and a continuous drain current of 55A. Offers a low drain-source on-resistance of 19mR (max) at a nominal gate-source voltage of 1V. Supports a maximum power dissipation of 107W and operates across a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with turn-on delay time of 9ns and fall time of 54ns.
PackageDPAK
Current Rating55A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
International Rectifier IRLR3103PBF technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
55A
Current Rating
55A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
24mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
19mR
Fall Time
54ns
Gate to Source Voltage (Vgs)
16V
Height
2.39mm
Input Capacitance
1.6nF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
107W
Mount
Surface Mount
Nominal Vgs
1V
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
69W
Rds On Max
19mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
20ns
Turn-On Delay Time
9ns
DC Rated Voltage
30V
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRLR3103PBF Datasheet
Download the complete datasheet for International Rectifier IRLR3103PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
