
N-Channel Power MOSFET, 100V Drain-to-Source Voltage (Vdss), 17A Continuous Drain Current (ID). Features 0.125ohm On-Resistance and 79W Max Power Dissipation. Designed for surface mount applications in a DPAK package, operating from -55°C to 175°C. This silicon Metal-oxide Semiconductor FET is RoHS compliant and lead-free.
International Rectifier IRLR3410TRLPBF technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 17A |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 16V |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 79W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRLR3410TRLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
