
N-channel MOSFET, DPAK package, 55V drain-source voltage, 89A continuous drain current, and 0.008 ohm maximum drain-source on-resistance. Features 130W power dissipation, 175°C max operating temperature, and 3V nominal gate-source voltage. This surface-mount silicon power transistor offers 33ns turn-off and 17ns turn-on delay times.
International Rectifier IRLR3705ZPBF technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 89A |
| Current Rating | 42A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 8MR |
| Dual Supply Voltage | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 2.9nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| Power Dissipation | 130W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | 55V |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRLR3705ZPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
