Power Field-Effect Transistor, 30A I(D), 20V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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International Rectifier IRLR3715TRPBF technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 54A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance | 1.06nF |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Power Dissipation | 71W |
| Rds On Max | 14mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| RoHS | Compliant |
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