N-channel MOSFET transistor, 55V drain-source breakdown voltage, 26A continuous drain current. Features 65mΩ drain-to-source resistance at 10V gate-source voltage, 740pF input capacitance, and 5.3ns fall time. Surface mountable in a 3-pin D-PAK (TO-252-3) package, operating from -40°C to 175°C with 79W maximum power dissipation. RoHS compliant and lead-free.
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International Rectifier IRLR4343PBF technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 26A |
| Current Rating | 26A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 5.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 740pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 79W |
| Mount | Surface Mount |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 79W |
| Rds On Max | 50mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 5.7ns |
| DC Rated Voltage | 55V |
| Width | 6.22mm |
| RoHS | Compliant |
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