N-Channel Power MOSFET, DPAK package, featuring 30V drain-source breakdown voltage and 3.3mΩ drain-source resistance. This silicon, metal-oxide semiconductor FET offers a continuous drain current of 161A and a maximum power dissipation of 140W. Designed for surface mounting, it operates within a temperature range of -55°C to 175°C and includes fast switching characteristics with turn-on delay of 25ns and fall time of 19ns.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power140W
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Technical Specifications
International Rectifier IRLR7843TRRPBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 161A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 4.38nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Surface Mount |
| Nominal Vgs | 2.3V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| Rds On Max | 3.3mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 25ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLR7843TRRPBF Datasheet
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